Abstract
High linearity power amplifier gain and efficiency is a contradictory issue. It has a high efficiency but the linearity is not ideal. In this dissertation, using the third generation of semiconductor material transistor and studying the structural characteristics of the periphery of each circuit make the efficiency, bandwidth, and linearity get a good result. The main work of this dissertation is to simulate the design of RF power amplifier which is based on GaN HEMT that is produced by Cree Company. First, the dissertation introduced the categories of RF and microwave circuits, the basics of the power amplifier, some necessary parameter, and linearization techniques. Then using HEMT, the single-tube RF high power amplifier is designed which has working bandwidth on L-band. And the output power is more than 50 dBm in the whole bandwidth and the power gain is not less than 14 dB.
Published Version
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