Abstract
The SiGe quantum well (QW) tunneling diodes with different Si cap thickness are designed in this work to investigate the detailed mechanism of light emission for the metal-insulator-semiconductor (MIS) light-emitting diode (LED). At the accumulation (negative) gate bias, the electrons tunnel from the metal gate to the SiGe QW semiconductor substrate (p-type). Meanwhile, the negative gate bias also attracts holes in the interface of insulator and SiGe QW semiconductor and then the tunneling electrons can recombine with holes to emit the infrared. LEDs with different Si/SiGe/Si structure are used to investigate the light-emission mechanism and prove that the region of infrared emission is mainly from the interface of the insulator and semiconductor, not from the neutral region in the semiconductor substrate. The accurate energy band and carrier concentration in the SiGe QW structure with operated bias are also simulated and compared it with the experimental data. It shows that the concentrations of the tunneling electrons, which will be drifted by the gate bias, plays the main role on the light emission and limits the light-emission region near the interface of insulator and semiconductor. This work helps us understand clearly the light-emission mechanism of the MIS LED, developed continuously by our group in the decade.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
