Abstract
In this paper, we present a critical study of a multi-quantum barrier (MQB) structure fabricated using the Al 0.5In 0.5P/Ga 0.5In 0.5P material system. The structure was optimised theoretically based on a single Γ band model. When an identical structure was placed in a quantum well laser device, no improvement in the threshold current was observed compared to QW laser structure without an MQB. Cross-sectional scanning tunnelling microscopy (STM) was used to assess the structural quality of the MQB structure for the first time. Factors affecting the limited barrier enhancement are discussed in terms of the interfacial quality of the Al 0.5In 0.5P/Ga 0.5In 0.5P interface in the superlattice of the MQB and the need to consider multi-valley transport. The paper highlights some of the fundamental problems that must be overcome for MQBs to be a viable method to improve red laser efficiency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
