Abstract
This work has demonstrated electroluminescence (EL) quenching of the InGaN/GaN quantum well (QW) diodes with multi-quantum barrier (MQB) structure at several temperatures from 20 to 300 K. Both high- and low-energy bands indicate a surprising tendency when the temperature and injection current are altered. Increasing temperature reduces the high-energy band and clearly increases the quantum efficiency of the low-energy band. The device with MQB improves the quantum efficiency throughout the whole temperature range and displays good agreement with the EL-integrated intensity in this study. The sample with an optimal MQB structure could significantly improve the quantum efficiency both at low temperature up to one order and room temperature up to 20% compared with the sample without the MQB structure.
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