Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes

Abstract

The effects of electron effective mass on the multiquantum barrier (MQB) structure in AlGaInP LD has been systematically studied. Using a new effective mass model, we found that we can achieve an enhanced barrier height of 1.68U0 or 253 m eV. However, such an increase in barrier height is much smaller than the previous reported value obtained using a different electron effective mass model. We also found that the chirped MQB (CMQB) can only enhance the barrier height by 0.276U0 . On the other hand, the enhanced barrier height can reach 2.2U0 for a properly designed multistack MQB (MSMQB).