Abstract
The semiconductor industry is pursuing unidirectional and gridded layouts as an approach to enable high-volume manufacturing for advanced technology nodes. Complementary lithography is a two-step scheme for fabricating such layouts where optical lithography produces unidirectional lines at a fixed pitch and electron-beam direct-write (EBDW) lithography cuts those lines. Since low throughput and high data volumes in the patterning of wafers are challenges facing EBDW lithography, the author considers theoretical and practical aspects of lossless data compression for the transfer of cut images.
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