Abstract
The semiconductor industry is pursuing unidirectional and gridded layouts as an approach to enable high-volume manufacturing for advanced technology nodes. Complementary lithography is a two-step scheme for fabricating such layouts where optical lithography produces unidirectional lines at a fixed pitch and electron-beam direct-write (EBDW) lithography cuts those lines. Since low throughput and high data volumes in the patterning of wafers are challenges facing EBDW lithography, the author considers theoretical and practical aspects of lossless data compression for the transfer of cut images.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
