Abstract
The shift-and-ratio method has been considered as one of the most accurate and consistent techniques for extracting the effective channel length of the MOS transistors. The use of original shift-and-ratio method for L eff extraction of MOS transistors with halo/pocket implants results in systematic errors for L eff. In this paper a modification of the original method is proposed and its effectiveness is assessed through simulation. The values of L eff extracted by the proposed method are more reasonable than those obtained using the original shift-and-ratio method.
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