Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

Abstract

The effects of different tungsten polycide technologies on the effective channel length and electrical performance of scaled CMOS transistors fabricated by rapid thermal annealing (RTA) have been investigated. Contrary to previous studies, it is found that the sputtered WSi/sub x/ device produces a larger reduction in channel length, a result which is confirmed by gate-to-drain overlap capacitance C/sub GD/ measurement. Experiments also indicate that the sputtered WSi/sub x/ devices possess a lower driving ability, and have higher off state leakage not only for the short channel but also for the long channel range.