Abstract
An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-type doped region on the performance parameters is studied, and the power-added efficiency (PAE) obtained and effectively improved is further verified. The drain saturation current and the threshold voltage of PDBS-HEMT has no major change compared with the traditional structure; the peak transconductance decreases slightly, but the breakdown voltage is significantly enhanced. Furthermore, the gate-source capacitance and gate-drain capacitance are reduced by 14.6% and 14.3%, respectively. By simulating the RF output characteristics of the device, the maximum oscillation frequency of the proposed structure is increased from 57 GHz to 63 GHz, and the saturated output power density is 10.9 W/mm, 9.3 W/mm and 6.4 W/mm at the frequency of 600 MHz, 1200 MHz and 2400 MHz, respectively. The highest PAE of 88.4% was obtained at 1200 MHz. The results show that the PDBS structure has an excellent power and efficiency output capability. Through the design of the P-type doped region, the DC and RF parameters and efficiency of the device are balanced, demonstrating the great potential of PDBS structure in high energy efficiency applications.
Highlights
As one of the third-generation semiconductors, Gallium Nitride has a higher critical breakdown field and wider bandgap than other materials, such as Si and GaAs, so that it can withstand a greater power density of the same size
Results in the AlGaN/GaN HEMT channel is obviously proportional to the thickness of the AlGaN
−3 for PDBS-HEMT with a doping concentration of 1×10 cm, Idsat is 551 mA/mm, which is slightly less than 596 mA/mm of the traditional structure
Summary
As one of the third-generation semiconductors, Gallium Nitride has a higher critical breakdown field and wider bandgap than other materials, such as Si and GaAs, so that it can withstand a greater power density of the same size. AlGaN barrier layer near the gate side between the gate and drain, enhancement mode device with par-tially GAN cap layer [6], DRBL structure with a double recess barrier layer on both sides of the gate [7], and changing the distance between the gate and drain [8]. Micromachines 2021, 12, 1035 enhancement mode device with par-tially GAN cap layer [6], DRBL structure with a double recess barrier layer on both sides of the gate [7], and changing the distance between the gate and drain [8]. With high efficiency and low energy consumption gradually becoming an important direction, the research on the power-added efficiency of devices becomes more and more important, but the related reports are very rare. PAE is discussed.of PAE, and the influence mechanism of various parameters on PAE is discussed
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