Abstract
Modifications to a standard Freeman ion source were made which increased 11B+ scanned wafer current by a minimum factor of 1.4, and 11B2+, 31P2+, and 75As2+ scanned wafer currents by a factor of 4.2. Order of magnitude increases in 31P3+ and 75As3+ scanned wafer currents were also measured in the extracted ion beam. Ion source feed materials were BF3 gas and elemental phosphorus and arsenic. Filament lifetime using BF3 gas has been observed to be in excess of 50 mA h. The apparent increased ionization efficiency was verified by a measured increase in electron density and temperature. In addition, at high extraction current densities (∼30 mA cm−2), the modifications resulted in a symmetric extracted ion beam and uniform filament erosion characteristics. Thus, it was concluded that the plasma uniformity has increased.
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