Abstract
A complete empirical large-signal model for the GaAs- and GaN-based HEMTs is presented. Three generalized drain current I–V models characterized by the multi-bias Pulsed I–V measurements are presented along with their dependence on temperature and quiescent bias state. The new I–V equations dedicated for different modeling cases are kept accurate enough to the higher-order derivatives of drain-current. Besides, an improved charge-conservative gate charge Q–V formulation is proposed to extract and model the nonlinear gate capacitances. The composite nonlinear model is shown to accurately predict the S-parameters, large-signal power performances as well as the two-tone intermodulation distortion products for various types of GaAs and GaN HEMTs. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2011.
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