Abstract
A differential voltage capacitance technique is described for measuring the capacitance of forward-biased Schottky diodes. This technique is based on the concept of an improved admittance bridge. Difficulties arising from the high conductive component were solved or minimized. Data were obtained for NiSi and PdGaAs Schottky diodes with quality factors as low as 0.001. Compared to accurate phase capacitance spectroscopy and other bridge methods, this technique is more reliable and easier to operate.
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