An improved and simple parameter extraction method and scaling model for RF MOSFETs up to 40 GHz

Abstract

In this article, a simple and efficient extraction procedure for the extrinsic gate, drain and source resistances is presented. The substrate network parameter, C sub, dependent on the drain–source (V ds) voltage is extracted in transistor cut-off region. The scaling rules of the extrinsic and intrinsic parameters are given in detail. Good agreement is obtained between the simulated and measured results for the 0.13 µm radio frequency metal oxide semiconductor field effect transistors in the frequency range of 0.1–40 GHz.