An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET

Soumya S Mohanty,Sikha Mishra,Debatanaya Sathpathy,Guru Prasad Mishra

doi:10.1007/978-981-13-8461-5_89

An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET

Soumya S Mohanty, Sikha Mishra + Show 2 more

https://doi.org/10.1007/978-981-13-8461-5_89

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Publication Date: Jun 28, 2019

Affiliation: Siksha O Anusandhan University, National Institute of Technology Raipur

#Double Gate Metal Oxide Semiconductor Field Effect Transistors #Gate Metal Oxide Semiconductor Field + Show 8 more

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Abstract

Double Gate Metal Oxide Semiconductor Field Effect Transistors (DGMOSFET) have one of the emerged potential contenders in CMOS VLSI technology due to the fast switching applications. In this proposed work the implementation of symmetrical work function variation of the dual material (SWVDM) at the source end of In0.53Ga0.47As/InP DG MOSFET using 2D Sentaurus TCAD device simulator. The high-K HfO2 is used in order to minimize the leakage. Simulation result reveals the excellent analog performance metrics like drive current, On resistance, and transconductance as compared to single material (SM) In0.53Ga0.47As/InP DG hetero MOSFET.

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