An explicit surface-potential-based MOSFET model for circuit simulation

Abstract

In this paper, a compact MOSFET model based on terms of surface potential is presented. An explicit approximate relation for surface potential as a function of terminal voltages is developed. The resulting model combines the accuracy of implicit single-piece models and the short calculation time of regional models. A comparison with measured data shows that the model gives an accurate description of drain current and transconductance in all regions of operation. The results are even accurate for distortion behaviour.