Abstract
This paper presents a new compact and physics-based submicron MOSFET model suitable for circuit simulation. It takes into account the major physical effects in state-of-the-art deep-submicron MOSFET devices. Moreover, it uses only 15 model parameters and ensures the continuity of the drain current, output conductance, transconductance, terminal charges and capacitances at the various operating region boundaries. The accuracy of the new model is verified by comparison with experimental data for MOSFETs with different dimensions. Furthermore, it passes a set of benchmark tests for different applications. The new model has been implemented in Microwind2 PC-based design tool.
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