A compact charge-based MOSFET model for circuit simulation

Abstract

This paper presents a physically based model for the MOS transistors suitable for design and simulation of integrated circuits. The static and dynamic characteristics of the MOSFET are accurately described by single-piece functions of the inversion charge densities at source and drain. A new compact and physical approach to short-channel effects is presented. We have run some tests to compare the performances of our model and widely used MOSFET models.