An engineering model for high-speed switching in GeSbTe phase-change memory

Abstract

Ge2Sb2Te5 is the most successful phase-change alloy in non-volatile memory using the amorphous-crystal phase transition. In deriving further high performance in switching, especially the transition speed from amorphous to crystal should still be modified. In this work, we examined an ideal Ge2Sb2Te5 alloy based on the Kolobov model using ab-initio molecular dynamics simulations. As a result, it was clear that a uniaxial exchange between vacancies and Ge atoms plays a crucial role in realizing high-speed switching and a large contrast in the resonance bonding state in the alloy. The vacancy engineering enables the alloy switching speed to be extremely faster.