Abstract
A device based on an asymmetric channel doping profile with the aim of reducing the inherent parasitic bipolar effects in fully depleted silicon-on-insulator (SOI) devices and improving the output characteristics is introduced. Measurements and two-dimensional simulations are used to study the device capabilities and limitations. (C) 1999 The Electrochemical Society. S1099-0062(99)07-087-X. All rights reserved.
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