Abstract
AbstractThe rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photoelectric memcapacitor, is proposed and demonstrated. This photoelectric memcapacitor, with a planar Au/La1.875Sr0.125NiO4/Au metal–semiconductor–metal structure, displays a complementary optical and electrical modulation of capacitance, which can be attributed to the charge trapping/detrapping‐induced Schottky barrier variation. It further exhibits versatile synaptic functions, such as photonic potentiation/electric depression, paired‐pulse facilitation, short‐/long‐term memory, and “learning‐experience” behavior. Moreover, the photoplasticity of the memcapacitor can be modulated by varying the frequency of applied AC voltage, thus enabling self‐adaptive optical signal detection and mimicry of interest‐modulated human visual memory. Therefore, it represents a new paradigm for artificial optoelectronic synapses and opens up opportunities for developing low‐power humanoid optoelectronic devices.
Published Version
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