Abstract
The structure of Si nanocrystals (nc-Si) embedded inSiO2 is promising for achieving optical gain and waveguiding with the advantage of full compatibilitywith the matured Si technology. In this paper, we report an approach to optical-constantprofiling for such a planar waveguide structure formed by Si ion implantation into aSiO2 thin film based on spectroscopic ellipsometry (SE). With the nc-Si optical constantscalculated from the Forouhi–Bloomer model and the nc-Si depth profile obtained fromsecondary ion mass spectroscopy (SIMS) measurements, the optical properties at a givendepth are simulated with the Maxwell–Garnett effective medium approximation(EMA). Then an SE fitting is carried out, and the optical constants of nc-Si areextracted from the best fitting. Finally, the depth profile of optical constants ofthe structure is obtained from the EMA calculation. The result also suggeststhat the structure has a very low optical loss in the visible to infrared spectralrange.
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