An Analytical Thermal Noise Model of the MOS Transistor Valid in All Modes of Operation

Abstract

Although some of the recently proposed compact models for thermal noise in MOS Transistor exhibit good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g absence of carrier heating, incorrect modeling of velocity saturation effect, wrong modeling of diffusivity etc.). This work presents a new completely analytical thermal noise model based on consistent physical assumptions and valid in all modes of inversion.