A review of Analytical thermal noise model

Abstract

In this paper, thorough study of Analytical thermal noise models for MOSFET is presented. Since the advent of basic MOSFET, various researchers develop the noise model. As, the device is shrinking the enhancement of the noise in the device attract researchers to make advances in the model according to new physical phenomenon that occur in deep sub-micron level. We are presented here, a review of recent analytical noise model published in the literature. The physical and analytical aspects of the drain current noise model are investigated here.