Compact Modeling of Thermal Noise in the MOS Transistor

Abstract

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of carrier heating, incorrect modeling of velocity saturation effect, wrong modeling of diffusivity, etc.). This brief presents a new, completely analytical thermal noise model based on consistent physical assumptions.