Abstract
The drain characteristics of a short channel MOSFET operating in the avalanche multiplication regime depends strongly on the flow of substrate current . In this work, the detailed physics and the corresponding mathematical analysis of the substrate current model of a short channel MOSFET in its avalanche multiplication regime has been presented, which can be used to find the different characteristics of the short channel MOSFET for a wide range of device parameters. It is shown that by using a multiplication model, the substrate current can be obtained for a particular drain source voltage . The model system shows excellent results, which were confirmed by the computer-aided simulation program (MATLAB).
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