Abstract
In this paper, we present a non-local electron substrate and gate current model for single-drain (SD) buried-channel (BC) pMOSFETs. A non-local impact ionization coefficient with characteristic length dependence both in exponential term and pre-exponential factor is used in the substrate current model. The gate current model is developed by originating a modified lucky electron concept including the quantum-mechanical tunneling effect in parallel. The channel electric field is first calculated by using an analytical pseudo-2-D MOSFET model, and the spatial distribution of electron temperature along the channel is then derived by using a simplified energy balance equation. From non-local impact ionization coefficient and electron temperature, the non-local electron substrate and gate current can be derived. This model is a time-saving CAD model and is physics transparent for single-drain buried-channel pMOSFETs.
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