An analytical charge-based capacitance model for double-gate tunnel FETs

Abstract

This paper presents an explicit capacitance model with closed-form expressions for double gate tunnel FETs (DG-TFETs). The model is based on a 2-D potential approach, considering the mobile charges in the solution. This model uses a quasi-static approach to obtain terminal capacitances. Charges associated to each electrode are calculated by adopting the Gaussian box, and then the critical terminal capacitances including the input capacitance and the Miller capacitance are analytically expressed. To derive the model, neither fitting parameter nor iterative process is used which means the proposed model can be used for SPICE modeling of TFETs . The presented model provides a physics insight to analyze transient performance in TFET-based circuits. The proposed model is in good agreement with TCAD simulation results. The model is validated for various structural and bias parameters. • Developing a simple and accurate analytical model to capture terminal capacitances of TFETs. • This analytical model can be used as SPICE model to analyze AC performance of TFET-based circuits. • Terminal charges are calculated by developing two-dimensional potential distribution and adopting Gaussian law. • The model results have been compared with simulation results to show accuracy of the model.