Abstract
In this paper, we present an accurate analytical potential model for the double-gate tunnel FETs (DG-TFETs) by solving Poisson’s equation with appropriate boundary conditions. Taking the mobile charge carriers in the channel and the depletion regions inside the source and drain into account, the model predicts the electrostatic potential of the homojunction device in all regions of the device operation more accurately, compared with the predictions of the previously reported models. The potential model is utilized for developing some models for important quantities in TFETs, such as lateral electric field, minimum tunneling length, and drain current. Owing to the physical and analytical nature of the developed models, one can pursue the influence of the transistor parameters on the electrical characteristics of DG-TFETs. To assess the accuracy of the proposed models, the results of the models are compared to those of the numerical simulations and found to be accurately predicting the simulation results for different device parameters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
