Abstract
A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss’s law and solving Poisson’s equation. We include the effect of quantum capacitance and GNR’s intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
