Abstract
An analytical model for surface potential of asymmetric double gate Bilayer Graphene (BLG) transistors is presented on the basis of two‐dimensional Poisson’s equation. To verify the accuracy of potential model, the modelling data are compared with the simulation data of FlexPDE program and a good agreement is observed. From surface potential expression, the device behaviour in velocity saturation region is investigated. As a result, lateral electric field and length of velocity saturation region (Ld) are formulated and their dependence on several device parameters is carefully examined.
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