An analytic I—V model for lightly doped drain (LDD) MOSFET devices

Abstract

An analytic I-V model for lightly doped drain (LDD) MOSFET devices is presented. In this model, the n-region is considered to be a modified buried-channel MOSFET device, and the channel region is considered to be an intrinsic enhancement-mode MOSFET device. Combining the models of these two regions, the drain current in the linear/saturation regions and the saturation voltage can be calculated directly from the terminal voltages. In addition, the parameters used in the channel region can be extracted by a series of least square fittings. According to comparisons between the experimental data measured from the test transistors and the theoretical calculations, the developed I-V model is shown to be valid for wide ranges of channel lengths.