Abstract
An analytic one-dimensional model for lightly doped drain (LDD) MOSFET devices is presented. This model decomposes the LDD device into an intrinsic MOSFET in series with n-source and drain diffusion. A conventional charge control model with a pseudo two-dimensional approach was used to calculate the current flow in the intrinsic MOSFET. The voltage drops in the n-source and drain, including both IR drops and voltage drop across the depletion region of the drain were calculated analytically. By reconstructing all the voltage drops across contact, source/drain, and channel regions, the calculated drain currents as a function of terminal voltages agree well with experimental data. Device optimization is also presented by using this analytical model for full LDD and As-P double diffused LDD structures.
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