An Accurate $C$– $V$ Measurement Method for Highly Leaky Devices—Part I

Abstract

Accurate C-V measurement becomes extremely difficult in advanced CMOS technology due to a high level of leakage across the gate dielectric. Recently, a new time-domain reflectometry (TDR)-based C-V measurement method was introduced. This new method offers ease of use and high accuracy while being able to handle a very high level of leakage current. It also allows series resistance and overlap capacitance to be extracted simultaneously and accurately without the need for additional measurement. In this paper, the theoretical basis of the TDR C-V method is described in detail, along with experimental results.