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Abstract
The analytical models for the output characteristics of tunnel FETs (TFETs) based on Maxwell–Boltzmann (MB) statistics have some accuracy issues, especially in linear region of operation, when compared with more sophisticated numerical approaches. In this letter, by exploiting the thermal injection method (TIM), an accurate analytical model for the TFET potential profile is proposed. Although the approach is initially envisaged for heterojunction TFETs (H-TFETs), it could be straightforwardly adopted for homojunction TFETs. After an accurate description of the potential profile is obtained, then, the current is computed by means of a Landauer-like expression. Comparison with the numerical simulations at different bias conditions show that the predicted output characteristics qualitatively improve, leading to a significant enhancement in accuracy at a much less-computational cost.
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