Abstract
Raman spectroscopy has been used in the identification of crystallography property of nanosemiconductors. The identified result by Raman spectroscopy is consistent with that by the X-ray refraction (XRD) in bulk materials and in non-polar semiconductors, e.g., porous silicon and Si nanowires. But for nano-polar semiconductor SiC, GaN and ZnO, their Raman spectra can not described by the crystalline model but the amorphous model related to the phonon density of states (PDOS). Moreover, it is found for these samples that Raman frequencies excided by different incident wavelengths were not changed, matching the no change characteristic of PODS with sample sizes. Therefore above results may indicate that these nano-polar semiconductors possess of amorphousness-like nature although they are crystalline by XRD measurements. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
