Amorphous silicon-electrolyte interface

Abstract

Amorphous silicon-electrolyte (AS-E) interface has been studied to determine the density of localized states in evaporated amorphous silicon films. Due to the large density of such states in amorphous semiconductors, very large fields are required to cause changes in the space-charge layer. AS-E system presents a more convenient system to meet this need for large fields than the usual MOS structure. A study of cpacitance as a function of bias shows that the density of localized states around E F is of the order of 10 18/cm 3 · eV and that it is fairly uniform in the midgap region.