Abstract
We show that structure in the density of localized states of an amorphous semiconductor beyond the apparently ubiquitous exponential band tails yield deviations from the usual power-law decay of the photocurrent, i(t) ∝ t α−1, which can be described analytically. With our expression, dispersive-transport results can be deconvoluted to provide a spectroscopy of the localized-state distribution when well-defined defect centers and band tails are simultaneously present.
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