Abstract
A double layer of plasma chemical vapor deposition SiOxNy and SiNx was applied to the gate insulator of an amorphous silicon (a-Si) thin-film transistor (TFT). When a thin SiNx layer is inserted between the a-Si of an a-Si TFT and the SiOxNy gate insulator, the density of trapped charges is found to decrease less than for a gate insulator with only SiNx, when the thickness of SiNx is decreased. No deterioration was observed in the switching characteristics of an a-Si TFT with a SiOxNy/SiNx gate insulator, compared with a-Si TFTs with SiNx gate insulators commonly used in liquid crystal displays. The density of trapped charges is related to the threshold voltage shift.
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