Abstract
AbstractThe off current behavior of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with an atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator were investigated at negative gate voltages. The a-Si:H TFT with SiO2 gate insulator has small off currents and large activation energy (Ea) of the off current compared to the a-Si:H TFT with SiNx gate insulator. The holes induced in the channel by negative gate voltage seem to be trapped in the defect states near the a-Si:H/SiO2 interface. The interface state density in the lower half of the band gap of a-Si:H/SiO2 appears to be much higher than that for a-Si:H/SiNx.
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