Amine‐stabilized cyclopentadienyl diisobutyl aluminum complexes as new kinds of precursors for the deposition of thin aluminum films by CVD

Abstract

Communication: The heteroepitaxy of diamond is of considerable scientific and technological interest. The significant lattice mismatch between diamond and silicon and the relatively high surface energy of a non‐terminated (100) diamond plane have prompted speculation that diamond nucleates on an aligned cubic silicon carbide interfacial layer. In this paper spectral and microscopic studies show that while formation of interfacial amorphous carbon and silicon carbide must be avoided, nevertheless an interfacial SiC layer is intimately involved in localized heteroepitaxial growth on (100) silicon.magnified image