Abstract
In this Letter, ambipolar transport properties of a bilayer of In2O3 and a pentacene heterostructure have been realized. While In2O3 thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO2∕p-Si substrates. However, when a bilayer of In2O3/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits.
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