Ambipolar transport of silver nanoparticles decorated graphene oxide field effect transistors

Abstract

In this article, we report ambipolar field effect transistor (FET) by using graphene oxide (GO) as a gate dielectric material for silver nanoparticles (AgNPs) decorated GO channel layer. GO was synthesized by Hummers’ method. The AgNPs were prepared via photochemical reduction of silver nitrate solution by using monoethanolamine as a reducing agent. Morphological properties of channel layer were characterized by Field Effect Scanning Electron Microscopy (FESEM). Fourier Transform Infrared Spectroscopy (FTIR) was carried out to characterize GO thin film. For device fabrication gold (Au) was deposited as source-drain contact and aluminum (Al) was taken as bottom contact. Electrical measurements were performed by back gate configuration. Ambipolar transport behavior was explained from transfer characteristics. A maximum electron mobiliy of 6.65 cm2/Vs and a hole mobility of 2.46 cm2/Vs were extracted from the transfer characteristics. These results suggest that GO is a potential candidate as a gate dielectric material for thin film transistor applications and also provides new insights in GO based research.