Abstract
Here, we report fabrication and characterization of thin film transistor based on graphene oxide (GO). Thin film of GO was deposited on n ++Si/SiO2substrate by drop-casting. Output characteristics of graphene oxide field effect transistor (GOFET) show gate effect without saturation. The non-existence of saturation is due to high carrier concentration in the channel which is made up of graphene oxide. Threshold voltage of 1.06V has been calculated from transfer characteristics.
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