Abstract
Analysis of ambient temperature influence on the performance of thin-film sensor, fabricated in a thin-film process has been carried out. The dependence of sensor power sensitivity both on the power dissipated in the heating resistor and ambient temperature has been evaluated numerically. The sensor's characteristics have been measured in the pressure range from 10 −3 to 10 5 Pa. The influence of temperature on the power sensitivity at different pressures was evaluated. Nearly linear relationship of sensitivity versus the sum of temperature of cold and hot thermocouple tips was stated. The change in ambient temperature affects significantly the measurement accuracy, especially at pressures below 10 −1 Pa and above 10 2 Pa.
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