Abstract
We have investigated aluminum (Al) as a n-type dopant for ZnTe layer grown by atmospheric pressure MOVPE using triethylaluminum as the dopant source. The effects of substrate temperature and transport rate ratio of diethytellurium to diethylzinc upon the photoluminescence property of ZnTe layer have been clarified. The substrate temperature influences the photoluminescence property of the layer considerably. With decreasing substrate temperature, the emissions associated with an acceptor-type complex of Al donor and Zn vacancy become remarkably weak in the spectrum, implying that self-compensation gets eliminated. Al incorporation is found to be facilitated when Te rich growth condition is adopted. Also very high quality doped films can be obtained under this condition.
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