Abstract
Results of our recent experiments relating to ZnTe homoepitaxial growth by atmospheric pressure metalorganic vapor phase epitaxy are described. The effects of substrate temperature, gas flow rate and VI/II ratio upon the growth rate of ZnTe layers have been investigated. The behavior of the growth rate is well explained with a simplified growth model, in which the diffusion in the boundary layer and the reaction-rate law described by Langmuir-Hinshelwood model are considered. We also deal with the results on the photoluminescence properties of ZnTe layers obtained under wide growth conditions covered from mass transport limited region to kinetically controlled one. The growth conditions close to the transition part between mass transport and surface kinetic regions led to ZnTe layer of high quality. Similar conclusion is also obtained for photo-assisted growth. Photo-assisted growth enlarges substrate temperature range for achieving ZnTe layer of good quality compared with thermal growth.
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