Abstract
The effect of substrate temperature upon the photoluminescence (PL) properties of phosphorus-doped ZnTe layers grown by atmospheric pressure metalorganic vapor phase epitaxy using tris-dimethylaminophosphorus as a dopant source has been investigated together with the growth rate behaviour. At a substrate temperature of 400 °C corresponding to the growth condition close to the mass transport to surface kinetic transition region, the PL spectrum at 4 K is characterized by a strong Ia and a weak free-to-bound transition emission, implying a P-doped ZnTe layer of good crystalline quality. For the layers grown at the substrate temperatures away from this temperature, on the other hand, a donor-acceptor pair recombination emission appears in the spectra. The P-doped layers exhibit only the edge emission at ∼549 nm in the room temperature PL specrum, independent of substrate temperature. The relationship between the electrical properties of P-doped layers and the substrate temperature has also clarified. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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