Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV

Abstract

This study explores high-energy aluminum (Al) implantation above 10MeV as a fabrication process to facilitate the creation of deep doping regions in silicon carbide (SiC). Experimental investigations were conducted to evaluate the technical feasibility of ultra-high energy implantation and high-energy channeling implantation of aluminum into 4H-SiC. Ultra-high-energy Al implantations at 30 and 48MeV were performed, revealing limitations such as increased charge dispersion and decreased current near accelerator technical limits. In contrast, high-energy channeling implantations at 12, 15, and 20MeV demonstrated successful Al channeling implantations into 4H-SiC, emphasizing the importance of precision in crystal orientation and mounting systems. Results indicate that channeling implantations, with precise instrumentation, are a preferred approach over non-channeled ultra-high-energy methods for fabricating deep doping regions in SiC, holding promise for advancing the next generation of high-voltage SiC devices.