Abstract
Deep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant peak has been observed at alpha-particle doses higher than about 6×1010cm−2. The electronic and annealing properties of the defect have been investigated. The defect is suggested to be a multivacancy complex.
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