Abstract

AbstractIn the present study GaN and Alx Ga1‐x N layers (with x below 5%) grown by plasma‐assisted MBE (PAMBE) were investigated by deep level transient spectroscopy (DLTS) and high‐resolution Laplace DLTS. In GaN a dominant DLTS peak was observed at about 120 K. Using the high‐resolution Laplace DLTS technique we demonstrate that this peak consists of two close components. Defects related to the nitrogen vacancy are the most probable candidates for the origin of these levels. Two other dominant peaks were observed in the DLTS spectra in AlxGa1‐xN layers with x = 1.4% and x = 3%, respectively. The position of the peaks depends on the Al content and shifts towards higher temperatures with Al concentration. The electrical properties of the peaks and their origin will be discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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